We present our studies on the transition metal dichalcogenide 1T tantalum disulphide. This layered material hosts an insulating commensurate charge density wave phase at low temperatures which has undergone extensive investigation as a prototypical Mott insulating system. We have studied this phase using primarily scanning tunnelling microscopy and angle resolved photoemission spectroscopy, focussing on the effects of the interlayer stacking of the charge density wave on the electronic structure of the material. Our principal findings consist of the observation and characterisation of a spatially extended metallic phase at the surface of samples in equilibrium conditions, high quality spectroscopic evidence of the effects of different surface terminations as well as the induction of a correlated metallic phase at low temperatures through the deliberate alteration of the stacking of the charge density wave through uniaxial strain. Our results highlight the broad spectrum of effects produced in tantalum disulphide by changes in the interlayer interactions.